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YZPST-BTA25-600BW TG25C60
YZPST-TG25..SERIES
YZPST-BTA25-600BW TG25C60
ТРИАК (ИЗОЛИРОВАННЫЙ ТИП)
TG25C/E/D - изолированные литые тиристоры, подходящие для широкого спектра применений, таких как копировальные аппараты, микроволновые печи, твердотельные переключатели, управление двигателем, управление освещением и управление нагревателем.
IT AV 25A
Высокая импульсная способность 400A
Изолированный монтаж AC2500V
Вкладышные терминалы
YZPST-TG25..SERIES
YZPST-BTA25-600BW TG25C60
TRIAC (ISOLATED TYPE)
TG25C/E/D are isolated molded triacs suitable for wide range of applications like copier, microwave oven, solid state switch,
motor control, light control and heater control.
IT AV 25A
High surge capability 400A
Isolated Nounting AC2500V
Tab Terminals
Maximum Ratings
|
Symbol |
Item |
Conditions |
Ratings |
Unit |
|
IT RMS |
R.M.S. On-State Current |
Tc |
25 |
A |
|
ITSM |
Surge On-State Current |
One cycle, 50Hz/60Hz, peak, non-repetitive |
300/330 |
A |
|
I2t |
I2t |
Value for one cycle of surge current |
450 |
A2S |
|
PGM |
Peak Gate Power Dissipation |
|
10 |
W |
|
PGAV |
Average Gate Power Dissipation |
|
1 |
W |
|
IGM |
Peak Gate Current |
|
3 |
A |
|
VGM |
Peak Gate Voltage |
|
10 |
V |
|
di/dt |
Critical Rate of Rise of On-State Current |
IG=100mA,Tj=25 VD=1/2VDRM dIG/dt=1A/μS |
50 |
A/μS |
|
Tj |
Operating Junction Temperature |
|
-25～+125 |
℃ |
|
Tstg |
Storage Temperature |
|
-40～+125 |
℃ |
|
VISO |
Isolation Breakdown Voltage R.M.S. |
A.C. 1 minute |
2500 |
V |
|
|
Mounting Torque M4 |
Recommended Value 1.0 ～1.4（10～14） |
14 |
kgf.CM |
Maximum Ratings
Tj=25 unless otherwise specified
| Symbol | Item | Ratings | Unit | |||
| TG25C60 | TG25C80 | TG25C100 | TG25C12 | V | ||
| VDRM | Repetitive Peak Off-State Voltage | 400 | 800 | 1000 | 1200 | V |
|
Symbol |
Item |
Conditions |
Ratings |
Unit |
|
|
IDRM |
Reptitive Peak Off-State Current, max |
VD=VDRM, Single phase, half wave, Tj=125℃ |
5 |
mA |
|
|
VTM |
Peak On-State Voltage, max |
On-State Current On-State Current √2X IT (RMS),Inst. measurement |
1.4 |
V |
|
|
I GT1 + |
1 |
Gate Trigger Current, max |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
|
I GT1 - |
2 |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
|
|
I GT3 + |
3 |
|
- |
mA |
|
|
I GT3 + |
4 |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
|
|
V GT1+ |
1 |
Gate Trigger Voltage, max |
Tj =25℃, IT=1A, VD=6V |
3 |
V |
|
V GT1- |
2 |
Tj =25℃, IT=1A, VD=6V |
3 |
V |
|
|
V GT3+ |
3 |
|
- |
V |
|
|
V GT3- |
4 |
Tj =25℃, IT=1A, VD=6V |
3 |
|
|
|
VGD |
Non-Trigger Gate Voltage, min |
Tj =25℃, VD= 1/2VRRM |
0.2 |
V |
|
|
tgt |
Turn On Time, max. |
IT=(RMS),IG= 100mA,VD=1/2VDR M,Tj=25℃,dIG/dt=1A/μS |
10 |
V |
|
|
dv/dt |
Critical Rate of Rise on-State Voltage,min. |
Tj=25℃,VD=2/3VDRM Exoponential wave. |
20 |
V/μS |
|
|
(dv/dt) c |
Critical Rate of Rise off-State Voltage at commutation, min |
Tj=25℃,VD=2/3VDRM di/dtc=15A/μS |
5 |
V/μS |
|
|
IH |
Holding Current, typ. |
Tj =25℃ |
30 |
mA |
|
|
Rth(j-c) |
Thermal Impedance, max |
Junction to case |
1.5 |
℃/W |
|
Связанные продукты
