YZPST-G15N65T
Max Junction Temperature 150°C
High breakdown voltage up to 650V for improved reliability
Short Circuit Rated
Very Low Saturation Voltage:
VCE(SAT) = 1.65V (Typ.) @ IC = 15A
Soft current turn-off waveforms
|
VCE |
650 |
V |
|
IC |
15 |
A |
|
VCE(SAT) IC=15A |
1.65 |
V |
Soft switching applications
Air conditioning
Motor drive inverter
|
Product |
Package |
Packaging |
|
YZPST-15N65T1 |
TO-220 |
Tube |
|
YZPST-15N65T1 |
TO-263 |
Tube |
|
YZPST-15N65T1 |
TO-220F |
Tube |
|
Parameter |
Symbol |
Value |
Unit |
|
Collector-Emitter Breakdown Voltage |
VCE |
650 |
V |
|
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
|
IC |
30
15
|
A |
|
Diode Forward current, limited by Tjmax
TC = 25°C
TC = 100°C
|
IF |
30
15
|
A |
|
Continuous Gate-emitter voltage |
VGE |
±20 |
V |
|
Transient Gate-emitter voltage |
VGE |
±30 |
V |
|
Turn off safe operating area VCE ≤650V,
Tj ≤ 150°C
|
- |
60 |
A |
|
Pulsed collector current, VGE=15V, tp limited by Tjmax |
ICM |
45 |
A |
|
Short Circuit Withstand Time, VGE= 15V, VCE≤ 400V |
Tsc |
5 |
μs |
|
TO-220F Power dissipation , Tj=25℃ |
Ptot |
27 |
W |
|
TO-220,TO-263, Power dissipation , Tj=25℃ |
Ptot |
105 |
W |
|
Operating junction temperature |
Tj |
-40...+150 |
°C |
|
Storage temperature |
Ts |
-55...+150 |
°C |
|
Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s |
- |
260 |
°C |
Thermal Resistance
|
Parameter
|
Symbol |
TO-220,TO-263 |
TO-220F |
Unit |
|
IGBT thermal resistance, junction - case |
Rθ(j-c) |
1.2 |
4.9 |
K/W |
|
Diode thermal resistance, junction - case |
Rθ(j-c) |
2.38 |
5.8 |
K/W |
|
Thermal resistance, junction - ambient |
Rθ(j-a) |
62.5 |
K/W |
|
Electrical Characteristics of the IGBT（Tj= 25℃ unless otherwise specified）
| Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
Static Characteristics (Tested on wafers) |
||||||
|
BVCES |
Collector to Emitter Breakdown
Voltage
|
VGE = 0V, IC = 1mA |
650 |
- |
- |
V |
|
VCE(SAT) |
Collector to Emitter Saturation
Voltage
|
IC = 15A, VGE = 15V |
- |
1.65 |
1.95 |
V |
|
VGE(th) |
G-E Threshold Voltage |
VGE = VCE, IC = 250μA |
4.1 |
5.0 |
5.7 |
V |
|
ICES |
Collector Cut-Off Current |
VCE = 650V, VGE = 0V |
- |
- |
25 |
μA |
|
IGES |
G-E Leakage Current |
VGE = ±20V, VCE = 0V |
- |
- |
±200 |
nA |
|
gfs |
Transconductance |
VCE=20V, IC=15A |
- |
10 |
- |
S |
|
Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
|
Dynamic |
||||||
|
Input capacitance |
Cies |
VCE = 25V, VGE = 0V, |
- |
990 |
- |
pF |
|
Output capacitance |
Coes |
- |
56 |
- |
||
|
Reverse transfer capacitance |
Cres |
- |
30 |
- |
||
|
Gate charge |
QG |
VCC = 480V, IC = 15A, VGE = 15V |
- |
92 |
- |
nC |
|
Short circuit collector current |
IC（SC） |
VGE=15V,tSC≤5us VCC=400V, |
- |
98 |
- |
A |
| Parameter |
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
Dynamic |
||||||
|
Turn-on Delay Time |
td(on) |
Tj=25°C VCC = 400V, IC = 15A,
VGE = 0/15V, Rg=12Ω
|
- |
15 |
- |
ns |
|
Rise Time |
tr |
- |
25 |
- |
ns |
|
|
Turn-off Delay Time |
td(off) |
- |
60 |
- |
ns |
|
|
Fall Time |
tf |
- |
46 |
- |
ns |
|
|
Turn-on Energy |
Eon |
- |
0.75 |
- |
mJ |
|
|
Turn-off Energy |
Eoff |
- |
0.1 |
- |
mJ |
|
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
|
Dynamic |
||||||
|
Diode Forward Voltage |
VFM |
IF = 15A |
- |
1.7 |
- |
V |
|
Reverse Recovery Time |
Trr |
IF= 15A VR = 300V, |
- |
50 |
- |
ns |
|
Reverse Recovery Current |
Irr |
- |
4 |
- |
A |
|
|
Reverse Recovery Charge |
Qrr |
- |
83 |
- |
nC |
|
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