YZPST-SS8550
Особенности
Потери мощности
PC :1W (Ta=25 C)
TO-92 Plastic-Encapsulate Transistors
YZPST-SS8550 TRANSISTOR (PNP)
FEATUREs
Power dissipation
PC :1W (Ta=25 ℃)
ORDERINGINFORMATION
PartNumber |
Package |
PackingMethod |
PackQuantity |
SS8550 |
TO-92 |
Bulk |
1000pcs/Bag |
SS8550-TA |
T0-92 |
Tape |
2000pcs/Box |
MAX1MUMRAT1NGs(Ta=25℃ unlessotherwise noted)
symbol |
Parameter |
Value |
Unit |
VCBO |
Collector-Base Voltage |
-40 |
V |
VCEO |
Collector-Emitter Voltage |
-25 |
V |
VEBO |
Emitter-Base Voltage |
-5 |
V |
IC |
Collector Current -Continuous |
- 1.5 |
A |
PD |
Collector Power Dissipation |
1000 |
mW |
R θ JA |
Thermal Resistance f rom Junction to Ambient |
125 |
℃ / W |
TJ,Tstg |
Operation Junction and Storage Temperature Range |
-55 -+150 |
℃ |
Ta=25 ℃ unless otherwise specified
Parameter | symbol | Test | Min | Typ | Max | Unit |
conditions | ||||||
Collector.base | V(BR)CBO | IC=- 100uA, IE=0 | -40 | V | ||
breakdown | ||||||
voltage | ||||||
Collector.emitter | V(BR)CEO | IC=-0. 1mA, IB=0 | -25 | V | ||
breakdown voltage | ||||||
Emitter.base | V(BR)EBO | IE=- 100uA, IC=0 | -5 | V | ||
breakdown | ||||||
voltage | ||||||
Collector | ICBO | VCB=-40V, IE=0 | -0. 1 | uA | ||
cut.off | ||||||
current | ||||||
Emitter | ICEO | VCE=-20V, IE=0 | -0. 1 | uA | ||
cut.off | ||||||
current | ||||||
Emitter | IEBO | VEB=-5V, IC=0 | -0. 1 | uA | ||
cut.off | ||||||
current | ||||||
DC | hFE(1) | VCE=- 1V, IC=- 100mA | 85 | 400 | ||
current | ||||||
gain | hFE(2) | VCE=- 1V, IC=-800mA | 40 | |||
Collector.emitter | VCE(sat) | IC=-800mA, IB=-80mA | -0.5 | V | ||
saturation | ||||||
voltage | ||||||
Base.emitter | VBE(sat) | IC=-800mA, IB=-80mA | -1.2 | V | ||
saturation voltage | ||||||
Base.emitter | VBE(on) | VCE=- 1V, IC=- 10mA | -1 | V | ||
voltage | ||||||
out | Cob | VCB=- 10V, IE=0mA,f=1MHZ | 20 | pF | ||
capacitance | ||||||
Transition | fT | VCE=- 10V, IC=-50mA,f=30MHZ | 100 | MHz | ||
frequency |
To.92 PackageoutlineDimensions