комплементарные кремниевые силовые транзисторы 2N3055/MJ2955
DESCRIPTION
The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case.
It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
The complementary PNP type is MJ2955.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
|
Parameter |
l |
Value |
Unit |
|
Collector-Base Voltage |
VCBO |
100 |
V |
|
Collector-Emitter Voltage |
VCEO |
60 |
V |
|
Emitter-Base Voltage |
VEBO |
7 |
V |
|
Collector Current |
IC |
15 |
A |
|
Base Current |
IB |
7 |
A |
|
Total Dissipation at |
Ptot |
115 |
W |
|
Max. Operating Junction Temperature |
Tj |
150 |
oC |
|
Storage Temperature |
Tstg |
0 |
oC |
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
|
Parameter |
Symbol |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
Collector Cut-off Current |
ICEO |
VCE=50V, IB=0 |
— |
— |
0.7 |
mA |
|
Emitter Cut-off Current |
IEBO |
VEB=7V, IC=0 |
— |
— |
5.0 |
mA |
|
Collector-Emitter Sustaining Voltage |
VCEO |
IC=100mA, IB=0 |
60 |
— |
— |
V |
|
DC Current Gain |
hFE(1) |
VCE=4.0V, IC=4.0A |
30 |
— |
70 |
|
|
hFE(2) |
VCE=4.0V, IC=10A |
15 |
— |
|
|
|
|
Collector-Emitter Saturation Voltage |
VCE(sat) |
IC=4.0A,IB=400mA |
— |
— |
1.0 |
V |
|
IC=10A,IB=3.3A |
— |
— |
3.0 |
|||
|
Base-Emitter On Voltage |
VBE(on) |
VCE=4V,IC=4.0A |
— |
— |
1.8 |
V |
|
Current Gain Bandwidth Product |
fT |
VCE=4.0V,IC=500mA |
— |
3.0 |
— |
MHz |
For more information about 2N3055/MJ2955 please download the PDF file above named " 2N3055-MJ2955-E PST"
